Damage accumulation in Si during high-dose self-ion implantation

Details

Request a copyRequest a copy
Serval ID
serval:BIB_858E007E13DD
Type
Article: article from journal or magazin.
Collection
Publications
Institution
Production externe
Title
Damage accumulation in Si during high-dose self-ion implantation
Journal
Journal of Applied Physics
Author(s)
Zhong  Y., Bailat  C., Averback  R. S., Ghose  S. K., Robinson  I. K.
ISSN
0021-8979
Publication state
Published
Issued date
2004
Peer-reviewed
Oui
Volume
96
Number
3
Pages
1328-1335
DOI
10.1063/1.1763242
Web of science
000222936900007
Create date
25/04/2008 17:53
Last modification date
20/08/2019 15:44
Usage data