serval:BIB_9E81E5239E8E
Composition and growth mode of MoSx sputtered films
10.1116/1.579157
Moser
J.
author
Lévy
F.
author
Bussy
F.
author
article
1994
Journal of Vacuum Science and Technology A - Vacuum, Surfaces, and Films
0734-2101
journal
12
494-500
MoS(x) lubricating thin films were deposited by nonreactive, reactive,
and low energy ion-assisted radio-frequency (rf) magnetron sputtering
from a MoS2 target. Depending on the total and reactive gas pressures,
the film composition ranges between MoS0.7 and MoS2.8. A low working
pressure was found to have effects similar to those of low-energy ion
irradiation. Films deposited at high pressure have (002) planes
preferentially perpendicular to the substrate, whereas films deposited
at low pressure or under low-energy ion irradiation have (002) mainly
parallel to it. Parallel films are sulfur deficient (MoS1.2-1.4). Their
growth is explained in terms of an increased reactivity of the basal
surfaces, itself a consequence of the creation of surface defects due to
ion irradiation. The films exhibit a lubricating character for all
compositions above MoS1.2. The longest lifetime in ball-on-disk wear
test was found for MoS1.5.
eng
60_published
true
peer-reviewed
University of Lausanne
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