Point defects and texture of Pd1-xInx sputtered intermetallic thin films

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State: Public
Version: Final published version
Serval ID
serval:BIB_899AF2EDEFE8
Type
Article: article from journal or magazin.
Collection
Publications
Institution
Title
Point defects and texture of Pd1-xInx sputtered intermetallic thin films
Journal
Intermetallics
Author(s)
Wu W.T., Schmid P.E., Lévy F., Bussy F.
ISSN-L
0966-9795
Publication state
Published
Issued date
1996
Peer-reviewed
Oui
Volume
4
Pages
617-623
Language
english
Abstract
Pd1-xInx thin films (0.4 < x < 0.56) were prepared by radio frequency
sputtering from a multi-zone target. The properties of these
Hume-Rothery alloys were studied by X-ray diffractometry, electron probe
microanalysis and scanning tunneling microscopy. The diffraction spectra
were analyzed to obtain the intensity ratio of the (100) superlattice
line to the (200) normal line, together with the variations of the
lattice constant. The results ape explained quantitatively by a model
based on point defects, i.e. Pd vacancies in In-rich films and Pd
antisite atoms in Pd-rich films. In-rich films grow preferentially in
the [100] direction while Pd-rich films grow preferentially in the
[110] direction. The grains in indium-rich sputtered films appear to
be enclosed in an atomically thick, indium-rich layer. The role of
texture and the influence of point defects on electrical resistivity is
also reported. (C) 1996 Elsevier Science Limited.
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01/10/2012 19:07
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20/08/2019 14:48
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